NJ1800D Datasheet - InterFET

NJ1800D Silicon Junction Field-Effect Transistor

F-44 01/99 NJ1800D Process Silicon Junction Field-Effect Transistor Ultra Low-Noise Pre-Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C 65°C to +175°C D G Devices in this Databook based on the NJ1800D Process. Datasheet U290, U291 S Die Size = 0.052" X 0.052" All Bond Pads ≥ 0.004" Sq. Substrate is also Gate. www.DataSheet4U.com At 25°C free air temperature: Static Electrical Charact.

NJ1800D_InterFET.pdf