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NJ1800D Datasheet - InterFET

NJ1800D - Silicon Junction Field-Effect Transistor

F-44 01/99 NJ1800D Process Silicon Junction Field-Effect Transistor Ultra Low-Noise Pre-Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C 65°C to +175°C D G Devices in this Databook based on the NJ1800D Process.

Datasheet U290, U291 S Die Size = 0.052" X 0.052" All Bond Pads ≥ 0.004" Sq.

Substrate is also Gate.

www.DataSheet4U.com At 25°C free air temperature: Static Electrical Charact

NJ1800D_InterFET.pdf

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Datasheet Details

Part number:

NJ1800D

Manufacturer:

InterFET

File Size:

148.97 KB

Description:

Silicon junction field-effect transistor.

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