NJ132L - Silicon Junction Field-Effect Transistor Low-Noise Amplifier
F-34 01/99 NJ132L Process Silicon Junction Field-Effect Transistor Low-Noise Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C 65°C to +175°C G S-D S-D G Die Size = 0.022" X 0.022" All Bond Pads = 0.004" Sq.
Substrate is also Gate.
Devices in this Databook based on the NJ132L Process.
Datasheet 2N6451, 2N6452 2N6453, 2N6454 IF1320 IFN152 2SK152 www.DataSheet4U.com At 25°C free air temper
