NJ14AL - Silicon Junction Field-Effect Transistor
F-4 01/99 NJ14AL Process Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier Rf AMP to 1.0 Ghz Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C 65°C to +175°C G S-D S-D G Die Size = 0.016" X 0.016" All Round Bond Pads = 0.0028" All Square Bond Pads = 0.004" Substrate is also Gate.
Devices in this Databook based on the NJ14AL Process.
Datasheet IF140, IF140A IF142 www.Data
