NJ16 - Silicon Junction Field-Effect Transistor
F-6 01/99 NJ16 Process Silicon Junction Field-Effect Transistor Low Current Switch General Purpose Amplifier High Breakdown Voltage Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C 65°C to +175°C G S-D S-D G Die Size = 0.017" X 0.017" All Bond Pads = 0.004" Sq.
Substrate is also Gate.
Devices in this Databook based on the NJ16 Process.
Datasheet 2N3954, 2N3955 2N3956 2N3957, 2N3958 2N42
