IRF6662PbF - Power MOSFET

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IRF6662PbF Power MOSFET by IRF - Datasheet Preview — Datasheet preview – IRF6662PbF

Datasheet Details

Part number	IRF6662PbF
Manufacturer	IRF
File Size	271.44 KB
Description	Power MOSFET
Datasheet	IRF6662PbF Datasheet
Additional preview pages of the IRF6662PbF datasheet.

Product details

Description

The IRF6662PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

old Voltage (V) Fig11. Maximum Safe Operating Area 7.0 ID = 100µA ID = 250µA 8 ID, Drain Current (A) 6.0 ID = 1.0mA ID = 1.0A 6 5.0 4 4.0 2 3.0 0 25 50 75 100 125 150 T A , Ambient Temperature (°C) 2.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Ambient Temperature 160 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID 1.6A 1.9A BOTTOM 4.9A TOP 140 120 100 80 60 40 20 0 25 50 75.

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Published: May 5, 2014 |