IRF6662PBF Datasheet - International Rectifier

IRF6662PBF Power MOSFET

The IRF6662PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used.

PD - 97243A DirectFET™ Power MOSFET RoHs Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques IRF6662PbF IRF6662TRPbF RDS(on) 17.5mΩ@ 10V Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 6.8nC 100V ma.

IRF6662PBF Features

* e-Drain Diode Forward Voltage 10 Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 7.0 ID = 100µA ID = 250µA 8 ID, Drain Current (A) 6.0 ID = 1.0mA ID = 1.0A 6 5.0 4 4.0 2 3.0 0 25 50 75 100 125 150 T A , Ambient Temperature (°C) 2.0 -75 -50 -25 0 25 50 75 100

IRF6662PBF Datasheet (271.77 KB)