IRF6648TRPbF, IRF6648PbF Datasheet - Infineon

IRF6648TRPbF Power MOSFET

The IRF6648PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET™ packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET™ package is compatible with existing layout geometries used.

IRF6648PbF IRF6648TRPbF RoHs Compliant  Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Optimized for Synchronous Rectification for 5V to 12V outputs Low Conduction Losses Ideal for 24V input Primary Side Forward Converters Low Profile (<0.7mm) Dual Sided Cooling Compatible  Compatible with existing Surface Mount Techniques  DirectFET™ Power MOSFET  Typical values (unless otherwise specified) VDSS 60V min VGS ±2.

IRF6648PbF-Infineon.pdf