Description
IRF6645PbF IRF6645TRPbF l RoHS Compliant, Halogen-Free l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for High.
The IRF6645PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state res.
Features
* IRF6645/TRPbF
1000 100
OPERATION IN THIS AREA LIMITED BY R DS(on)
100μsec 10
ISD, Reverse Drain Current (A)
1.0
VGS = 0V 0.1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
1 TA = 25°C Tj = 150°C Single Pulse
0.1 0.1 1.0
Applications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling
to maximize thermal transfer in power systems, improving previous best t