IRF6645TRPBF - Power MOSFET
The IRF6645PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries .
IRF6645PbF IRF6645TRPbF l RoHS Compliant, Halogen-Free l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques DirectFET Power MOSFET Typical values (unless otherwise specified) VDSS VGS RDS(on) 100.
IRF6645TRPBF Features
* IRF6645/TRPbF
1000 100
OPERATION IN THIS AREA LIMITED BY R DS(on)
100μsec 10
ISD, Reverse Drain Current (A)
1.0
VGS = 0V 0.1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
1 TA = 25°C Tj = 150°C Single Pulse
0.1 0.1 1.0