IRF6641TRPBF Datasheet - International Rectifier

IRF6641TRPBF, N-Channel HEXFET Power MOSFET

www.DataSheet4U.com PD - 97262 IRF6641TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) RoHS Compliant l Lead-Free (Qua.
The IRF6641PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state res.

Features

* = 150°C Single Pulse 1 10 100 1msec 1000 Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) , Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 6.0 VDS, Drain-to-Source Voltage (V) 5 4 ID, Drain Current (A) 5.0 3 4.0 ID ID ID ID = 150µA = 250µA = 1.0mA = 1.0A 2

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t

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