IRF6645PBF Datasheet - International Rectifier

IRF6645PBF, Power MOSFET

IRF6645PbF IRF6645TRPbF l RoHS Compliant, Halogen-Free l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for High.
The IRF6645PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state res.

Features

* IRF6645/TRPbF 1000 100 OPERATION IN THIS AREA LIMITED BY R DS(on) 100μsec 10 ISD, Reverse Drain Current (A) 1.0 VGS = 0V 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 1 TA = 25°C Tj = 150°C Single Pulse 0.1 0.1 1.0

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t

IRF6645PBF-InternationalRectifier.pdf