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IRF6645 Datasheet - International Rectifier

IRF6645 - DirectFET Power MOSFET Typical calues

The IRF6645 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used.
www.DataSheet4U.com PD - 97006 IRF6645 DirectFET™ Power MOSFET ‚ l l l l l l l l l RoHs Compliant Containing No Lead and Bromide  Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses Compatible with existing Surface Mount Techniques  Typical values (unless otherwise specified) VDSS Qg tot V.

IRF6645 Features

* 1000.0 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 6.0 Fig11. Maximum Safe Operating Area 6.0 5.0 VGS(th) Gate threshold Voltage (V) 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 ID , Drain Current (A) 4.0 3.0 ID = 1.0A ID = 1.0mA ID = 250µA ID = 50µA 2.0 1.0

IRF6645_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRF6645

Manufacturer:

International Rectifier

File Size:

268.82 KB

Description:

Directfet power mosfet typical calues.

IRF6645 Distributor

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