IRF6645 Datasheet - International Rectifier

IRF6645 DirectFET Power MOSFET Typical calues

The IRF6645 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used.

www.DataSheet4U.com PD - 97006 IRF6645 DirectFET Power MOSFET l l l l l l l l l RoHs Compliant Containing No Lead and Bromide Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses Compatible with existing Surface Mount Techniques Typical values (unless otherwise specified) VDSS Qg tot V.

IRF6645 Features

* 1000.0 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 6.0 Fig11. Maximum Safe Operating Area 6.0 5.0 VGS(th) Gate threshold Voltage (V) 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 ID , Drain Current (A) 4.0 3.0 ID = 1.0A ID = 1.0mA ID = 250µA ID = 50µA 2.0 1.0

IRF6645_InternationalRectifier.pdf