IRF6645 Datasheet - International Rectifier

IRF6645, DirectFET Power MOSFET Typical calues

www.DataSheet4U.com PD - 97006 IRF6645 DirectFET Power MOSFET l l l l l l l l l RoHs Compliant Containing No Lead and Bromide Low Profile (<0..
The IRF6645 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resista.

Features

* 1000.0 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 6.0 Fig11. Maximum Safe Operating Area 6.0 5.0 VGS(th) Gate threshold Voltage (V) 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 ID , Drain Current (A) 4.0 3.0 ID = 1.0A ID = 1.0mA ID = 250µA ID = 50µA 2.0 1.0

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t

IRF6645_InternationalRectifier.pdf