Datasheet4U Logo Datasheet4U.com

IRF6641TR1PBF Datasheet - International Rectifier

IRF6641TR1PBF - N-Channel HEXFET Power MOSFET

The IRF6641PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries .
www.DataSheet4U.com PD - 97262 IRF6641TRPbF DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) RoHS Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l VDSS Qg tot VGS Qgd 9.5nC RDS(on) 51mΩ@ .

IRF6641TR1PBF Features

* = 150°C Single Pulse 1 10 100 1msec 1000 Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) , Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 6.0 VDS, Drain-to-Source Voltage (V) 5 4 ID, Drain Current (A) 5.0 3 4.0 ID ID ID ID = 150µA = 250µA = 1.0mA = 1.0A 2

IRF6641TR1PBF_InternationalRectifier.pdf

Preview of IRF6641TR1PBF PDF
IRF6641TR1PBF Datasheet Preview Page 2 IRF6641TR1PBF Datasheet Preview Page 3

Datasheet Details

Part number:

IRF6641TR1PBF

Manufacturer:

International Rectifier

File Size:

282.73 KB

Description:

N-channel hexfet power mosfet.

IRF6641TR1PBF Distributor

📁 Related Datasheet

📌 All Tags