IRF6644 Datasheet - International Rectifier

IRF6644 DirectFETPower MOSFET

The IRF6644 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used i.

PD - 96908C IRF6644 DirectFET Power MOSFET l l l l l l l l l Lead and Bromide Free Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses Compatible with existing Surface Mount Techniques Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 11.5nC RDS(on) Vgs(th) 3.7V 100V ma.

IRF6644 Features

* -Drain Diode Forward Voltage 12 5.0 Fig11. Maximum Safe Operating Area Typical VGS(th) Gate threshold Voltage (V) ID = 1.0A 10 4.5 ID = 1.0mA ID = 250µA ID = 150µA ID , Drain Current (A) 8 4.0 6 3.5 4 3.0 2 2.5 0 25 50 75 100 125 150 2.0 -50 -25 0 25 50 75 100 125 150 TA , Ambient T

IRF6644_InternationalRectifier.pdf