IRF6646 Datasheet - International Rectifier

IRF6646 DirectFET Power MOSFET

The IRF6646 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used i.

www.DataSheet4U.com PD - 96995A IRF6646 DirectFET™ Power MOSFET Typical values (unless otherwise specified) RoHS compliant containing no lead or bromide Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses Compatible with existing Surface Mount Techniques VDSS Qg tot VGS Qgd 12nC RDS(on) 7.6mΩ@ 1.

IRF6646 Features

* rain-to-Source Voltage (V) Fig11. Maximum Safe Operating Area 12 ID, Drain Current (A) 10 8 6 4 2 0 25 50 75 100 125 150 T A , Ambient Temperature (°C) 5.0 ID ID ID ID = 150µA = 250µA = 1.0mA = 1.0A 4.0 3.0 2.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Dr

IRF6646 Datasheet (269.13 KB)