IRF6646PbF Datasheet (International Rectifier)

IRF6646PbF, DirectFET Power MOSFET

The IRF6646PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries used

PD - 97224A IRF6646PbF IRF6646TRPbF l RoHs Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques DirectFET Power MOSFET VDSS 80V max Typical values (unless otherwise specified) VGS RDS(on)

IRF6646PbF Features

* msec 10msec 1 0.1 TA = 25°C TJ = 150°C Single Pulse 0.01 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig11. Maximum Safe Operating Area ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) 14 6.0 ID = 150µA 12 ID = 250µA 5.0 ID = 1.0mA 10 ID = 1.0A 8 4.0 6 4