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IRF6646PbF DirectFET Power MOSFET

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Description

PD - 97224A IRF6646PbF IRF6646TRPbF l RoHs Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for High Pe.
The IRF6646PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resi.

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Features

* msec 10msec 1 0.1 TA = 25°C TJ = 150°C Single Pulse 0.01 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig11. Maximum Safe Operating Area ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) 14 6.0 ID = 150µA 12 ID = 250µA 5.0 ID = 1.0mA 10 ID = 1.0A 8 4.0 6 4

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best therma

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