Description
PD - 97224A IRF6646PbF IRF6646TRPbF l RoHs Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for High Pe.
The IRF6646PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resi.
Features
* msec
10msec
1
0.1 TA = 25°C TJ = 150°C Single Pulse
0.01
0.01
0.10
1.00
10.00 100.00
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
ID, Drain Current (A)
Typical VGS(th) Gate threshold Voltage (V)
14 6.0 ID = 150µA
12 ID = 250µA 5.0 ID = 1.0mA
10 ID = 1.0A
8
4.0
6
4
Applications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best therma