IRF6646TRPbF Datasheet - International Rectifier

DirectFET Power MOSFET

IRF6646TRPbF Features

* msec 10msec 1 0.1 TA = 25°C TJ = 150°C Single Pulse 0.01 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig11. Maximum Safe Operating Area ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) 14 6.0 ID = 150µA 12 ID = 250µA 5.0 ID = 1.0mA 10 ID = 1.0A 8 4.0 6 4

IRF6646TRPbF General Description

The IRF6646PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used.

IRF6646TRPbF Datasheet (646.54 KB)

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Part number:

IRF6646TRPbF

Manufacturer:

International Rectifier

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646.54 KB

Description:

Directfet power mosfet.
PD - 97224A IRF6646PbF IRF6646TRPbF l RoHs Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for High Pe.

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IRF6646TRPbF DirectFET Power MOSFET International Rectifier

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IRF6646TRPbF Features

IRF6646TRPbF General Description

Datasheet Details

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