IRF6648 Datasheet - International Rectifier

IRF6648 DirectFET Power MOSFET

The IRF6648 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in po.

PD - 97043C IRF6648 DirectFET Power MOSFET l RoHs Compliant Containing No Lead and Bromide l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Optimized for Synchronous Rectification for 5V to 12V outputs l Ideal for 24V input Primary Side Forward Converters l Low Conduction Losses l Compatible with Existing Surface Mount Techniques Typical values (unless otherwise specified) VDSS VGS RDS(on) Qg tot Q.

IRF6648 Features

* . + -VDS VGS 3mA IG ID Current Sampling Resistors Fig 14a. Gate Charge Test Circuit Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 14b. Gate Charge Waveform 15V VDS L DRIVER RG V2G0SV tp D.U.T IAS 0.01Ω + - VDD A Fig 15a. Unclamped Inductive Test Circuit V(BR)DSS tp IAS Fig 15b. Unc

IRF6648 Datasheet (257.92 KB)