IRF60B217
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IRF60B217 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF60B217,IIRF60B217
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤9.0mΩ ·Enhancemen.
IRF60DM206 - N-Channel Power MOSFET
(International Rectifier)
Application Brushed motor drive applications BLDC motor drive applications Battery powered circuits Half-bridge and full-bridge topologies .
IRF60R217 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRF60R217, IIRF60R217
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤9.9mΩ ·Enhancement mode: ·100% avalanche.
IRF60R217 - IR MOSFET
(Infineon)
IR MOSFET StrongIRFET™ IRF60R217
Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-.
IRF610 - N-Channel Mosfet Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF610
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for .
IRF610 - N-Channel Power MOSFET
(Intersil Corporation)
IRF610
Data Sheet June 1999 File Number
1576.3
3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field .
IRF610 - N-Channel Power MOSFET
(Fairchild Semiconductor)
.
IRF610 - Power MOSFET
(Vishay)
Power MOSFET
IRF610, SiHF610
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
200 VGS = 10 V
8..
IRF6100 - HEXFET Power MOSFET
(International Rectifier)
l Ultra Low RDS(on) per Footprint Area l Low Thermal Resistance
l P-Channel MOSFET l One-third Footprint of SOT-23 l Super Low Profile (<.8mm) l Avail.
IRF6100PBF - HEXFET Power MOSFET
(International Rectifier)
PD - 96012B
IRF6100PbF
HEXFET® Power MOSFET
l l l l l l l
Ultra Low RDS(on) per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Foo.