Description
PD - 97243A DirectFET™ Power MOSFET RoHs Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for High Performance I.
The IRF6662PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resi.
Features
* e-Drain Diode Forward Voltage
10
Typical VGS(th) Gate threshold Voltage (V)
Fig11. Maximum Safe Operating Area
7.0 ID = 100µA ID = 250µA
8
ID, Drain Current (A)
6.0
ID = 1.0mA ID = 1.0A
6
5.0
4
4.0
2
3.0
0 25 50 75 100 125 150 T A , Ambient Temperature (°C)
2.0 -75 -50 -25 0 25 50 75 100
Applications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best therma