IRF6662TRPBF, IRF6662PBF - Power MOSFET

International Rectifier

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IRF6662TRPBF Datasheet Preview — This datasheet PDF includes multiple part numbers: IRF6662TRPBF, IRF6662PBF. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	IRF6662TRPBF, IRF6662PBF
Manufacturer	International Rectifier
File Size	271.77 KB
Description	Power MOSFET
Datasheet	IRF6662PBF-InternationalRectifier.pdf
Note	This datasheet PDF includes multiple part numbers: IRF6662TRPBF, IRF6662PBF. Please refer to the document for exact specifications by model.

IRF6662TRPBF Product details

Description

The IRF6662PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

e-Drain Diode Forward Voltage 10 Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 7.0 ID = 100µA ID = 250µA 8 ID, Drain Current (A) 6.0 ID = 1.0mA ID = 1.0A 6 5.0 4 4.0 2 3.0 0 25 50 75 100 125 150 T A , Ambient Temperature (°C) 2.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Ambient Temperature 160 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID 1.6.

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Published: Apr 22, 2014 |