IRF6662 Datasheet - International Rectifier

IRF6662 DirectFet Power MOSFET

The IRF6662 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used i.

www.DataSheet4U.com PD - 97039 IRF6662 DirectFET™ Power MOSFET Typical values (unless otherwise specified) Lead and Bromide Free Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses Compatible with existing Surface Mount Techniques VDSS Qg tot VGS Qgd 6.8nC RDS(on) Vgs(th) 3.9V 100V max ±20V max.

IRF6662 Features

* rea 7.0 ID = 100µA ID = 250µA 8 ID, Drain Current (A) 6.0 ID = 1.0mA ID = 1.0A 6 5.0 4 4.0 2 3.0 0 25 50 75 100 125 150 T A , Ambient Temperature (°C) 2.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Ambient Temperature 160 EAS , Single Pu

IRF6662 Datasheet (294.52 KB)