IRF6668PBF Datasheet - International Rectifier

IRF6668PBF DirectFET Power MOSFET

The IRF6668PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used.

www.DataSheet4U.com PD - 97232A IRF6668PbF IRF6668TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) l l l l l l l l l l RoHs Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques VDSS Q.

IRF6668PBF Features

* ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 100 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Threshold Voltage vs. Temperature ID 80 TOP 4.3A 7.6A BOTTOM 23A 60 40 20 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 14. Maximum Avalanche Energy vs. Drai

IRF6668PBF Datasheet (652.75 KB)