Description
www.DataSheet4U.com PD - 97232A IRF6668PbF IRF6668TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) l l l l l l l l l l .
The IRF6668PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resi.
Features
* ( °C )
Fig 12. Maximum Drain Current vs. Case Temperature
100
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Threshold Voltage vs. Temperature
ID 80
TOP
4.3A 7.6A BOTTOM 23A
60
40
20
0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drai
Applications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best therma