IRF6668TRPBF Datasheet - International Rectifier

DirectFET Power MOSFET

IRF6668TRPBF Features

* ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 100 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Threshold Voltage vs. Temperature ID 80 TOP 4.3A 7.6A BOTTOM 23A 60 40 20 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 14. Maximum Avalanche Energy vs. Drai

IRF6668TRPBF General Description

The IRF6668PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used.

IRF6668TRPBF Datasheet (652.75 KB)

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Part number:

IRF6668TRPBF

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International Rectifier

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652.75 KB

Description:

Directfet power mosfet.
www.DataSheet4U.com PD - 97232A IRF6668PbF IRF6668TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) l l l l l l l l l l .

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IRF6668TRPBF DirectFET Power MOSFET International Rectifier

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IRF6668TRPBF Features

IRF6668TRPBF General Description

Datasheet Details

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