IRF6785MTRPbF Datasheet - IRF

IRF6785MTRPbF DIGITAL AUDIO MOSFET

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improv.

DIGITAL AUDIO MOSFET PD - 97282 IRF6785MTRPbF Key Parameters 200 VGS = 10V 85 26 3.0 V m: nC VDS Latest MOSFET Silicon technology Key parameters optimized for Class-D audio amplifier RDS(on) typ. @ applications Qg typ. Low RDS(on) for improved efficiency Low Qg for better THD and improved efficiency RG(int) max Low Qrr for better THD and lower EMI Low package stray inductance for reduced ringing and lower EMI Can deliver up.

IRF6785MTRPbF-IRF.pdf