IRF6709S2TRPbF Datasheet, Mosfet, International Rectifier

IRF6709S2TRPbF Features

• Mosfet to-Source Current (A) ID, Drain-to-Source Current (A) 0.1 2.5V 0.01 0.1 ≤60µs PULSE WIDTH Tj = 25°C 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics

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Part number:

IRF6709S2TRPbF

Manufacturer:

International Rectifier

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255.32kb

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📄 Datasheet

Description:

Power mosfet. The IRF6709S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve imp

IRF6709S2TRPbF Application

• Applications PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regard

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IRF6709S2TRPbF

International Rectifier

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