IRF6709S2TRPbF

Power MOSFET

International Rectifier

IRF6709S2TRPbF Features

* THIS AREA LIMITED BY R DS(on) 100µsec 10 1msec 10msec 1 DC 0.1 TA = 25°C TJ = 175°C Single Pulse 0.01 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig 11. Maximum Safe Operating Area 40 3.0 Typical V GS(th) Gate threshold Voltage (V) ID, Drain Current (A) 35 30 25 20 15 10

IRF6709S2TRPbF General Description

The IRF6709S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in.

IRF6709S2TRPbF Datasheet (255.32 KB)

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Datasheet Details

Part number:

IRF6709S2TRPbF

Manufacturer:

International Rectifier

File Size:

255.32 KB

Description:

Power mosfet.
l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Freq.

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IRF6709S2TRPbF Power MOSFET International Rectifier

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IRF6709S2TRPbF Features

IRF6709S2TRPbF General Description

Datasheet Details

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