IRF6709S2TRPbF Datasheet - International Rectifier

IRF6709S2TRPbF Power MOSFET

The IRF6709S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in.

l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Control FET Application l Compatible with existing Surface Mount Techniques l 100% Rg tested PD - 97328A IRF6709S2TRPbF IRF6709S2TR1PbF DirectFET Power MOSFET Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 25V max ±20V max 5.9mΩ@10V 10.1mΩ@.

IRF6709S2TRPbF Features

* THIS AREA LIMITED BY R DS(on) 100µsec 10 1msec 10msec 1 DC 0.1 TA = 25°C TJ = 175°C Single Pulse 0.01 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig 11. Maximum Safe Operating Area 40 3.0 Typical V GS(th) Gate threshold Voltage (V) ID, Drain Current (A) 35 30 25 20 15 10

IRF6709S2TRPbF-InternationalRectifier.pdf