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IRF6709S2TRPbF Power MOSFET

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Description

l RoHS Compliant and Halogen Free  l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Freq.
The IRF6709S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance.

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Features

* THIS AREA LIMITED BY R DS(on) 100µsec 10 1msec 10msec 1 DC 0.1 TA = 25°C TJ = 175°C Single Pulse 0.01 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig 11. Maximum Safe Operating Area 40 3.0 Typical V GS(th) Gate threshold Voltage (V) ID, Drain Current (A) 35 30 25 20 15 10

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t

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