IRF6706S2TR1PBF Datasheet - International Rectifier

IRF6706S2TR1PBF DirectFET Power MOSFET

The IRF6706S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used i.

PD - 97485 IRF6706S2TRPbF IRF6706S2TR1PbF l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Control FET Application l Compatible with existing Surface Mount Techniques l 100% Rg tested D G S D www.DataSheet4U.com DirectFET Power MOSFET Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 4.4nC RDS(on) .

IRF6706S2TR1PBF Features

* -40°C 10 10 1msec 10msec DC 1 1 VGS = 0V 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V) 0.1 T A = 25°C T J = 150°C Single Pulse 0.01 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(t

IRF6706S2TR1PBF Datasheet (284.88 KB)