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IRF6706S2TR1PBF, IRF6706S2TRPBF DirectFET Power MOSFET

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Description

PD - 97485 IRF6706S2TRPbF IRF6706S2TR1PbF l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Packa.
The IRF6706S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve improved performanc.

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This datasheet PDF includes multiple part numbers: IRF6706S2TR1PBF, IRF6706S2TRPBF. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
IRF6706S2TR1PBF, IRF6706S2TRPBF
Manufacturer
International Rectifier
File Size
284.88 KB
Datasheet
IRF6706S2TRPBF_InternationalRectifier.pdf
Description
DirectFET Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IRF6706S2TR1PBF, IRF6706S2TRPBF.
Please refer to the document for exact specifications by model.

Features

* -40°C 10 10 1msec 10msec DC 1 1 VGS = 0V 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V) 0.1 T A = 25°C T J = 150°C Single Pulse 0.01 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(t

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t

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