IRF6709S2TR1PbF Description
l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Freq.
The IRF6709S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance.
IRF6709S2TR1PbF Features
* THIS AREA LIMITED BY R DS(on)
100µsec
10 1msec
10msec 1 DC
0.1 TA = 25°C TJ = 175°C Single Pulse
0.01
0.01 0.10
1.00
10.00 100.00
VDS, Drain-to-Source Voltage (V)
Fig 11. Maximum Safe Operating Area
40 3.0
Typical V GS(th) Gate threshold Voltage (V)
ID, Drain Current (A)
35
30
25
20
15
10
IRF6709S2TR1PbF Applications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t
📁 Related Datasheet
📌 All Tags
