IRF6709S2TR1PBF Datasheet - International Rectifier

IRF6709S2TR1PBF Power MOSFET

The IRF6709S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used i.

PD - 97328A IRF6709S2TRPbF IRF6709S2TR1PbF l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Control FET Application l Compatible with existing Surface Mount Techniques l 100% Rg tested DirectFET Power MOSFET Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 2.8nC RDS(on) Qgs2 1.1nC RDS(on) Qoss 4.

IRF6709S2TR1PBF Features

* D, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 10 1 0.1 T A = 25°C T J = 175°C Single Pulse VGS = 0V 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VSD, Source-to-Drain Voltage (V) 0.01 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source

IRF6709S2TR1PBF-InternationalRectifier.pdf