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IRG4BC20MD-S INSULATED GATE BIPOLAR TRANSISTOR

IRG4BC20MD-S Description

PD -94116 IRG4BC20MD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

IRG4BC20MD-S Features

* Rugged: 10µsec short circuit capable at VGS=15V

IRG4BC20MD-S Applications

* IGBT Co-packaged with ultra-soft-recovery antiparallel diode
* Industry standard D2Pak package C Short Circuit Rated Fast IGBT VCES = 600V G E VCE(on) typ. = 1.85V @VGE = 15V, IC = 11A Benefits
* Offers highest efficiency and short circuit capability for intermediate ap

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Datasheet Details

Part number
IRG4BC20MD-S
Manufacturer
IRF
File Size
200.73 KB
Datasheet
IRG4BC20MD-S_IRF.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR

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INSULATED GATE BIPOLAR TRANSISTOR IRF
IRF IRG4BC20MD-S-like datasheet