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IRG4BC20W-S INSULATED GATE BIPOLAR TRANSISTOR

IRG4BC20W-S Description

PD - 94076 IRG4BC20W-S INSULATED GATE BIPOLAR TRANSISTOR .

IRG4BC20W-S Applications

* Industry-benchmark switching losses improve efficiency of all power supply topologies
* 50% reduction of Eoff parameter
* Low IGBT conduction losses
* Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability C

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Datasheet Details

Part number
IRG4BC20W-S
Manufacturer
IRF
File Size
152.24 KB
Datasheet
IRG4BC20W-S_IRF.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR

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INSULATED GATE BIPOLAR TRANSISTOR IRF
IRF IRG4BC20W-S-like datasheet