IRG4PC50F

INSULATED GATE BIPOLAR TRANSISTOR

IRF

* Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).

* Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

* Industry standard TO-247AC package C Fast Speed IGBT VCES = 600V

IRG4PC50F

IRF

146.42 KB

Insulated gate bipolar transistor.

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IRG4PC50F INSULATED GATE BIPOLAR TRANSISTOR IRF

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