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IRG4PC50FD - INSULATED GATE BIPOLAR TRANSISTOR

Datasheet Summary

Features

  • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
  • IGBT co-packaged with.

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Datasheet preview – IRG4PC50FD

Datasheet Details

Part number IRG4PC50FD
Manufacturer IRF
File Size 211.82 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet IRG4PC50FD Datasheet
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Full PDF Text Transcription

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PD 91469B IRG4PC50FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package C Fast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A n-cha nn el Benefits • Generation -4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's .
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