* C VCES = 600V G E VCE(on) typ. = 1.28V @VGE = 15V, IC = 41A Benefits n-channel Generation -4 IGBT's offer highest efficiencies available IGBT's optimized for specific application conditions HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require
IRG4PC50SDPBF Datasheet (404.22 KB)
IRG4PC50SDPBF
International Rectifier
404.22 KB
Insulated gate bipolar transistor.
PD - 97316
IRG4PC50SDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Standard: Optimized for minimum saturation voltage an.
📁 Related Datasheet
IRG4PC50S INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRG4PC50SPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG4PC50F INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRG4PC50F-EPBF Fast Speed IGBT (International Rectifier)
IRG4PC50FD INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRG4PC50FDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG4PC50FPBF Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG4PC50K INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG4PC50KD INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRG4PC50KDPBF UltraFast IGBT (International Rectifier)
