Datasheet4U Logo Datasheet4U.com

IRG4PC50S - INSULATED GATE BIPOLAR TRANSISTOR

Datasheet Summary

Features

  • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz).
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
  • Industry standard TO-247AC package C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.28V @VGE = 15V, IC = 41A n-channel Benefits.
  • Generation 4 IGBT's offer highest efficiency available.
  • IGBT's optimized for specified.

📥 Download Datasheet

Datasheet preview – IRG4PC50S

Datasheet Details

Part number IRG4PC50S
Manufacturer IRF
File Size 164.63 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet IRG4PC50S Datasheet
Additional preview pages of the IRG4PC50S datasheet.

📁 Similar Datasheet

  • IRG4PC50SDPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
  • IRG4PC50SPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
  • IRG4PC50F-EPBF - Fast Speed IGBT (International Rectifier)
  • IRG4PC50FDPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
  • IRG4PC50FPBF - Fast Speed IGBT (International Rectifier)
  • IRG4PC50K - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
  • IRG4PC50KDPBF - UltraFast IGBT (International Rectifier)
  • IRG4PC50KPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
  • IRG4PC50UDPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
  • IRG4PC50UPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
Other Datasheets by IRF

Full PDF Text Transcription

Click to expand full text
PD - 91581A IRG4PC50S INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.
Published: |