IRG4PC50U

INSULATED GATE BIPOLAR TRANSISTOR

IRF

* UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

* Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

* Industry standard TO-247AC package C UltraFast Speed IGBT

IRG4PC50U

IRF

147.45 KB

Insulated gate bipolar transistor.

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IRG4PC50U INSULATED GATE BIPOLAR TRANSISTOR IRF

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