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PD -95185
IRG4PC50UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package • Lead-Free
C
UltraFast CoPack IGBT
VCES = 600V
G E
VCE(on) typ. = 1.65V
@VGE = 15V, IC = 27A
n-ch an nel
Benefits
• Generation 4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's .
IRG4PC50UDPBF Datasheet
