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IRGPC30F INSULATED GATE BIPOLAR TRANSISTOR

IRGPC30F Description

PD - 9.1023 IRGPC30F INSULATED GATE BIPOLAR TRANSISTOR .
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, whil.

IRGPC30F Features

* Switching-loss rating includes all "tail" losses

IRGPC30F Applications

* TO -2 4 7 AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Gate-to-Emi

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Datasheet Details

Part number
IRGPC30F
Manufacturer
IRF
File Size
111.73 KB
Datasheet
IRGPC30F_IRF.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR

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INSULATED GATE BIPOLAR TRANSISTOR IRF
IRF IRGPC30F-like datasheet