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IRGPC30M Datasheet - IRF

IRGPC30M_IRF.pdf

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Datasheet Details

Part number:

IRGPC30M

Manufacturer:

IRF

File Size:

250.13 KB

Description:

Insulated gate bipolar transistor.

IRGPC30M, INSULATED GATE BIPOLAR TRANSISTOR

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

They provide substantial benefits to a host of high-voltage, h

IRGPC30M Features

* Short circuit rated - 10µs @ 125°C, V GE = 15V

* Switching-loss rating includes all "tail" losses

* Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve C Short Circuit Rated Fast IGBT VCES = 600V G E VCE(sat) ≤ 2.9V @VGE = 15V

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