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IRGPC30U

INSULATED GATE BIPOLAR TRANSISTOR

IRGPC30U Features

* Switching-loss rating includes all "tail" losses

* Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT VCES = 600V VCE(sat) ≤ 3.0V @VGE = 15V, I C = 12A n-channel Description Insulated Gate Bipolar Transistors (IGBTs

IRGPC30U General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, h.

IRGPC30U Datasheet (248.74 KB)

Preview of IRGPC30U PDF

Datasheet Details

Part number:

IRGPC30U

Manufacturer:

IRF

File Size:

248.74 KB

Description:

Insulated gate bipolar transistor.

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IRGPC30U INSULATED GATE BIPOLAR TRANSISTOR IRF

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