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IRGPC30S INSULATED GATE BIPOLAR TRANSISTOR

IRGPC30S Description

Previous Datasheet Index Next Data Sheet PD - 9.1146 IRGPC30S INSULATED GATE BIPOLAR TRANSISTOR .
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, whil.

IRGPC30S Features

* Switching-loss rating includes all "tail" losses

IRGPC30S Applications

* TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Vol

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Datasheet Details

Part number
IRGPC30S
Manufacturer
IRF
File Size
253.90 KB
Datasheet
IRGPC30S_IRF.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR

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INSULATED GATE BIPOLAR TRANSISTOR IRF
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