IS62WV51216EALL - ULTRA LOW POWER CMOS STATIC RAM

ISSI

IS62WV51216EALL Datasheet Preview — Preview of IS62WV51216EALL PDF

Datasheet Details

Part number	IS62WV51216EALL
Manufacturer	ISSI
File Size	1.22 MB
Description	ULTRA LOW POWER CMOS STATIC RAM
Datasheet	IS62WV51216EALL-ISSI.pdf

IS62WV51216EALL Product details

Description

The IS62WV51216EALL/ IS62WV51216EBLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits.It is fabricated using 's high- performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.When is HIGH (deselected) or when CS2 is low (deselected) or when is low , CS2 is high and both and are HIGH, the device assumes a standby mode at which the power dissipation can be red

Features

High-speed access time: 45ns, 55ns.
CMOS low power operation.
36 mW (typical) operating.
12 µW (typical) CMOS standby.
TTL compatible interface levels.
Single power supply.
1.65V.
2.2V VDD (62/65WV51216EALL).
2.2V--3.6V VDD (62/65WV51216EBLL).
Data control for upper and lower bytes.
Automotive temperature (-40oC to +125oC) BLOCK.

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Published: Jun 9, 2016 |