IS62WV51216BLL, IS62WV51216ALL - ULTRA LOW POWER CMOS STATIC RAM

Integrated Silicon Solution

IS62WV51216BLL Datasheet Preview — This datasheet PDF includes multiple part numbers: IS62WV51216BLL, IS62WV51216ALL. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	IS62WV51216BLL, IS62WV51216ALL
Manufacturer	Integrated Silicon Solution
File Size	190.60 KB
Description	ULTRA LOW POWER CMOS STATIC RAM
Datasheet	IS62WV51216ALL_IntegratedSiliconSolution.pdf
Note	This datasheet PDF includes multiple part numbers: IS62WV51216BLL, IS62WV51216ALL. Please refer to the document for exact specifications by model.

IS62WV51216BLL Product details

Description

The ISSI IS62WV51216ALL/ IS62WV51216BLL are high- speed, 8M bit static RAMs organized as 512K words by 16 bits.It is fabricated using ISSI's high-performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.When CS1 is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1 is LOW, CS2 is HIGH and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipati

Features

High-speed access time: 45ns, 55ns.
CMOS low power operation.
36 mW (typical) operating.
12 µW (typical) CMOS standby.
TTL compatible interface levels.
Single power supply.
1.65V--2.2V VDD (62WV51216ALL).
2.5V--3.6V VDD (62WV51216BLL).
Fully static operation: no clock or refresh required.
Three state outputs.
Data control for upper and lower bytes.
Industrial temperature available.

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Published: Mar 20, 2006 |