Description
The ISSI IS61WV51216EDALL and
IS61/64WV51216EDBLL are high-speed, 8M-bit static RAMs organized as 512K words by 16 bits.It is fabri-
cated using ISSI's high-performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.Easy memory expansion is provided b
Features
- High-speed access times: 8, 10, 20 ns.
- High-performance, low-power CMOS process.
- Multiple center power and ground pins for greater
noise immunity.
- Easy memory expansion with CE and OE options.
- CE power-down.
- Fully static operation: no clock or refresh
required.
- TTL compatible inputs and outputs.
- Single Power Supply.
- Vdd = 1.65V to 2.2V (IS61WV51216EDALL).
- Vdd = 2.4V to 3.6V (IS61/64WV51216EDBLL).
