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IS64WV51216EEBLL

512K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

IS64WV51216EEBLL Features

* High-speed access time: 8ns, 10ns, 20ns

* Single power supply

* 1.65V-2.2V VDD (IS61WV51216EEALL)

* 2.4V-3.6V VDD (IS61/64WV51216EEBLL)

* Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2

IS64WV51216EEBLL General Description

The ISSI IS61/64WV51216EEALL/BLL are high-speed, low power, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability. This highly reliable process coupled with innovative circuit design t.

IS64WV51216EEBLL Datasheet (866.18 KB)

Preview of IS64WV51216EEBLL PDF

Datasheet Details

Part number:

IS64WV51216EEBLL

Manufacturer:

ISSI

File Size:

866.18 KB

Description:

512k x 16 high speed aynchronous cmos static ram.

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IS64WV51216EEBLL 512K HIGH SPEED AYNCHRONOUS CMOS STATIC RAM ISSI

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