IS66WVD2M16ALL Datasheet - ISSI

IS66WVD2M16ALL 32Mb Async and Burst CellularRAM

CellularRAM™ (Trademark of MicronTechnology) products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications. The 32Mb DRAM core device is organized as 2 Meg x 16 bits. This device is a variation of the industry-standard Flash control interface, with.

IS66WVD2M16ALL 32Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD2M16ALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device uses a multiplexed address and data bus scheme to minimize pins and includes a industry standard burst mode for increased read and write bandwidth. The device includes several power saving modes : Reduced Array Refresh mode where data is retained in a portion.

IS66WVD2M16ALL Features

* Single device supports asynchronous and burst operation

* Mixed Mode supports asynchronous write and synchronous read operation

* Dual voltage rails for optional performance

* VDD 1.7V~1.95V, VDDQ 1.7V~1.95V

* Multiplexed address and data bus

* ADQ0~ADQ15

* Asynchronous

IS66WVD2M16ALL Datasheet (557.60 KB)

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Datasheet Details

Part number:

IS66WVD2M16ALL

Manufacturer:

ISSI

File Size:

557.60 KB

Description:

32mb async and burst cellularram.

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IS66WVD2M16ALL 32Mb Async and Burst CellularRAM ISSI

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