* Single device supports asynchronous and burst operation
* Mixed Mode supports asynchronous write and synchronous read operation
* Dual voltage rails for optional performance
* VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
* Multiplexed address and data bus
* ADQ0~ADQ15
* Asynchronous
IS66WVD4M16ALL Datasheet (557.87 KB)
IS66WVD4M16ALL
ISSI
557.87 KB
64mb async and burst cellularram.
IS66WVD4M16ALL 64Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random .
📁 Related Datasheet
IS66WVD1M16ALL 16Mb Async and Burst CellularRAM (ISSI)
IS66WVD2M16ALL 32Mb Async and Burst CellularRAM (ISSI)
IS66WVD2M16DALL 32Mb Async and Burst CellularRAM (ISSI)
IS66WV1M16DALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM (ISSI)
IS66WV1M16DBLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM (ISSI)
IS66WV1M16EALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM (ISSI)
IS66WV1M16EBLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM (ISSI)
IS66WV51216ALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM (ISSI)
IS66WV51216BLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM (ISSI)
IS66WV51216DALL 8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM (Integrated Silicon Solution)
