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IS66WVD4M16ALL 64Mb Async and Burst CellularRAM

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Description

IS66WVD4M16ALL 64Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random .
CellularRAMâ„¢ (Trademark of MicronTechnology) products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable appl.

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Datasheet Specifications

Part number
IS66WVD4M16ALL
Manufacturer
ISSI
File Size
557.87 KB
Datasheet
IS66WVD4M16ALL-ISSI.pdf
Description
64Mb Async and Burst CellularRAM

Features

* Single device supports asynchronous and burst operation
* Mixed Mode supports asynchronous write and synchronous read operation
* Dual voltage rails for optional performance
* VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
* Multiplexed address and data bus
* ADQ0~ADQ15
* Asynchronous

Applications

* where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance

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