IS66WVD4M16ALL - 64Mb Async and Burst CellularRAM

ISSI

IS66WVD4M16ALL Datasheet Preview — Preview of IS66WVD4M16ALL PDF

Datasheet Details

Part number	IS66WVD4M16ALL
Manufacturer	ISSI
File Size	557.87 KB
Description	64Mb Async and Burst CellularRAM
Datasheet	IS66WVD4M16ALL-ISSI.pdf

IS66WVD4M16ALL Product details

Description

CellularRAM™ (Trademark of MicronTechnology) products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.

Features

Single device supports asynchronous and burst operation.
Mixed Mode supports asynchronous write and synchronous read operation.
Dual voltage rails for optional performance.
VDD 1.7V~1.95V, VDDQ 1.7V~1.95V.
Multiplexed address and data bus.
ADQ0~ADQ15.
Asynchronous mode read access : 70ns.
Burst mode for Read and Write operation.
4, 8, 16 or Continuous.
Low Power Consumption.
Asynchronous Operation < 25 mA.
Burst operation < 35 mA (@10.

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Published: Jun 9, 2016 |