Datasheet4U Logo Datasheet4U.com

IS67WV1M16EBLL Datasheet - ISSI

ULTRA LOW POWER PSEUDO CMOS STATIC RAM

IS67WV1M16EBLL Features

* High-Speed access time : - 70ns ( IS66WV1M16EALL ) - 60ns (IS66/67WV1M16EBLL )

* CMOS Lower Power Operation

* Single Power Supply

* VDD =1.7V~1.95V( IS66WV1M16EALL )

* VDD =2.5V~3.6V (IS66/67WV1M16EBLL )

* Three State Outputs

* Data Control for Upper and Lower bytes

IS67WV1M16EBLL General Description

The ISSI IS66WV1M16EALL and IS66/67WV1M16EBLL are high-speed,16M bit static RAMs organized as 1M words by 16 bits. It is fabricated using ISSI’s high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power con.

IS67WV1M16EBLL Datasheet (667.79 KB)

Preview of IS67WV1M16EBLL PDF

Datasheet Details

Part number:

IS67WV1M16EBLL

Manufacturer:

ISSI

File Size:

667.79 KB

Description:

Ultra low power pseudo cmos static ram.

📁 Related Datasheet

IS67WV51216DBLL 8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM (Integrated Silicon Solution)

IS67WV51216EBLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM (ISSI)

IS67WVC1M16ALL 16Mb Async/Page/Burst CellularRAM (ISSI)

IS67WVC2M16EALL 32Mb Async/Page/Burst CellularRAM (ISSI)

IS67WVC2M16ECLL 32Mb Async/Page/Burst CellularRAM (ISSI)

IS67WVC4M16ALL 64Mb Async/Page/Burst CellularRAM (ISSI)

IS67WVC4M16EALL 64Mb Async/Page/Burst CellularRAM (ISSI)

IS67WVC4M16ECLL 64Mb Async/Page/Burst CellularRAM (ISSI)

IS67WVE1M16EALL 16Mb Async/Page PSRAM (ISSI)

IS67WVE1M16EBLL 16Mb Async/Page PSRAM (ISSI)

TAGS

IS67WV1M16EBLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM ISSI

Image Gallery

IS67WV1M16EBLL Datasheet Preview Page 2 IS67WV1M16EBLL Datasheet Preview Page 3

IS67WV1M16EBLL Distributor