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IS67WV1M16EBLL

ULTRA LOW POWER PSEUDO CMOS STATIC RAM

IS67WV1M16EBLL Features

* High-Speed access time : - 70ns ( IS66WV1M16EALL ) - 60ns (IS66/67WV1M16EBLL )

* CMOS Lower Power Operation

* Single Power Supply

* VDD =1.7V~1.95V( IS66WV1M16EALL )

* VDD =2.5V~3.6V (IS66/67WV1M16EBLL )

* Three State Outputs

* Data Control for Upper and Lower bytes

IS67WV1M16EBLL General Description

The ISSI IS66WV1M16EALL and IS66/67WV1M16EBLL are high-speed,16M bit static RAMs organized as 1M words by 16 bits. It is fabricated using ISSI’s high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power con.

IS67WV1M16EBLL Datasheet (667.79 KB)

Preview of IS67WV1M16EBLL PDF

Datasheet Details

Part number:

IS67WV1M16EBLL

Manufacturer:

ISSI

File Size:

667.79 KB

Description:

Ultra low power pseudo cmos static ram.

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IS67WV1M16EBLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM ISSI

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