Datasheet4U Logo Datasheet4U.com

IS67WVC2M16ECLL Datasheet - ISSI

32Mb Async/Page/Burst CellularRAM

IS67WVC2M16ECLL Features

* Single device supports asynchronous , page, and burst operation

* Mixed Mode supports asynchronous write and synchronous read operation

* Dual voltage rails for optional performance

* ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V

* CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V

* Asynchronous

IS67WVC2M16ECLL General Description

CellularRAM™ (Trademark of MicronTechnology Inc.) products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications. The 32Mb DRAM core device is organized as 2 Meg x 16 bits. This device is a variation of the industry-standard Flash control interface th.

IS67WVC2M16ECLL Datasheet (933.75 KB)

Preview of IS67WVC2M16ECLL PDF

Datasheet Details

Part number:

IS67WVC2M16ECLL

Manufacturer:

ISSI

File Size:

933.75 KB

Description:

32mb async/page/burst cellularram.
IS66WVC2M16EALL/CLL IS67WVC2M16EALL/CLL 32Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC2M16EALL/CLL is an integrated memory device containi.

📁 Related Datasheet

IS67WVC2M16EALL 32Mb Async/Page/Burst CellularRAM (ISSI)

IS67WVC1M16ALL 16Mb Async/Page/Burst CellularRAM (ISSI)

IS67WVC4M16ALL 64Mb Async/Page/Burst CellularRAM (ISSI)

IS67WVC4M16EALL 64Mb Async/Page/Burst CellularRAM (ISSI)

IS67WVC4M16ECLL 64Mb Async/Page/Burst CellularRAM (ISSI)

IS67WV1M16EBLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM (ISSI)

IS67WV51216DBLL 8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM (Integrated Silicon Solution)

IS67WV51216EBLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM (ISSI)

IS67WVE1M16EALL 16Mb Async/Page PSRAM (ISSI)

IS67WVE1M16EBLL 16Mb Async/Page PSRAM (ISSI)

TAGS

IS67WVC2M16ECLL 32Mb Async Page Burst CellularRAM ISSI

Image Gallery

IS67WVC2M16ECLL Datasheet Preview Page 2 IS67WVC2M16ECLL Datasheet Preview Page 3

IS67WVC2M16ECLL Distributor