Datasheet4U Logo Datasheet4U.com

IS67WV51216EBLL, IS66WV51216EALL Datasheet - ISSI

IS67WV51216EBLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM

The ISSI IS66WV51216EALL and IS66/67WV51216EBLL are high-speed,8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI’s high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power .

IS67WV51216EBLL Features

* High-Speed access time : - 70ns ( IS66WV51216EALL ) - 60ns (IS66/67WV51216EBLL )

* CMOS Lower Power Operation

* Single Power Supply - VDD =1.7V~1.95V( IS66WV51216EALL ) - VDD =2.5V~3.6V (IS66/67WV51216EBLL )

* Three State Outputs

* Data Control for Upper and Lower bytes

* L

IS66WV51216EALL-ISSI.pdf

This datasheet PDF includes multiple part numbers: IS67WV51216EBLL, IS66WV51216EALL. Please refer to the document for exact specifications by model.
IS67WV51216EBLL Datasheet Preview Page 2 IS67WV51216EBLL Datasheet Preview Page 3

Datasheet Details

Part number:

IS67WV51216EBLL, IS66WV51216EALL

Manufacturer:

ISSI

File Size:

723.87 KB

Description:

Ultra low power pseudo cmos static ram.

Note:

This datasheet PDF includes multiple part numbers: IS67WV51216EBLL, IS66WV51216EALL.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

IS67WV51216DBLL 8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM (Integrated Silicon Solution)

IS67WV1M16EBLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM (ISSI)

IS67WVC1M16ALL 16Mb Async/Page/Burst CellularRAM (ISSI)

IS67WVC2M16EALL 32Mb Async/Page/Burst CellularRAM (ISSI)

IS67WVC2M16ECLL 32Mb Async/Page/Burst CellularRAM (ISSI)

IS67WVC4M16ALL 64Mb Async/Page/Burst CellularRAM (ISSI)

IS67WVC4M16EALL 64Mb Async/Page/Burst CellularRAM (ISSI)

IS67WVC4M16ECLL 64Mb Async/Page/Burst CellularRAM (ISSI)

TAGS

IS67WV51216EBLL IS66WV51216EALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM ISSI

IS67WV51216EBLL Distributor