80N60A
IXYS Corporation
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(Cmos)
CMP80N06/CMB80N06/CMI80N06
N-Channel Enhancement Mode Field Effect Transistor
General Description Product Summery
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High Current IGBT
Short Circuit SOA Capability
IXSK 80N60B IXSX 80N60B
VCES =
IC25 = =VCE(sat)
600 V 160 A 2.5 V
Symbol
V CES
VCGR V
CES
VGEM I
C2.
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GOFORD
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The 80N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide.
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Product Summary Drain source voltage Drain-Source on-state resistance Cont.
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isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
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·DESCRIPTION ·Drain Current ID= 80A@ TC=25℃ ·Drain Source Voltage-
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(UTC)
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Preliminary
80A, 60V N-CHANNEL POWER MOSFET
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The UTC 80N06 is an N-channel MOSFET using UTC adva.
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.
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(UTC)
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