CS19-12HO1
IXYS Corporation
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Phase control thyristors.
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CS19-12ho1S - High Efficiency Thyristor
(IXYS)
High Efficiency Thyristor
Single Thyristor
Part number
CS19-12ho1S
CS19-12ho1S
VRRM = 1200 V
I TAV
=
20 A
VT = 1.31 V
4/2 1 3
Backside: anode
.
CS19-08HO1 - Phase Control Thyristors
(IXYS Corporation)
CS 19
Phase Control Thyristors
VRRM = 800-1200 V IT(RMS) = 29 A IT(AV)M = 19 A
VRSM .. VDSM V 800 1200
VRRM VDRM V 800 1200
Type.
CS19-08ho1S - High Efficiency Thyristor
(IXYS)
High Efficiency Thyristor
Single Thyristor
Part number
CS19-08ho1S
CS19-08ho1S
VRRM I TAV VT
= = =
800 V 20 A
1.31 V
4/2 1 3
Backside: anode
Fe.
CS19 - Phase Control Thyristors
(IXYS Corporation)
CS 19
Phase Control Thyristors
VRRM = 800-1200 V IT(RMS) = 29 A IT(AV)M = 19 A
VRSM .. VDSM V 800 1200
VRRM VDRM V 800 1200
Type.
CS19N10A0 - Silicon N-Channel Power MOSFET
(CR Micro)
Silicon N-Channel Power MOSFET
○R
CS19N10 A0
General Description:
CS19N10 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high den.
CS19N10A8 - Silicon N-Channel Power MOSFET
(CR Micro)
Silicon N-Channel Power MOSFET
○R
CS19N10 A8
General Description:
CS19N10 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high den.
CS19N40A8H - Silicon N-Channel Power MOSFET
(Huajing Microelectronics)
Silicon N-Channel Power MOSFET
CS19N40 A8H
○R
General Description:
CS19N40 A8H the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-ali.
CS19N40A8R - Silicon N-Channel Power MOSFET
(CR Micro)
Silicon N-Channel Power MOSFET
○R
CS19N40 A8R
General Description:
VDSS
400
V
CS19N40 A8R, the silicon N-channel Enhanced ID
19
A
VDMOSFETs,.
CS19N40AN - Silicon N-Channel Power MOSFET
(Huajing Microelectronics)
Silicon N-Channel Power MOSFET
CS19N40 AN
○R
General Description:
CS19N40 AN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig.
CS19N40ANR - Silicon N-Channel Power MOSFET
(CR Micro)
Silicon N-Channel Power MOSFET
○R
CS19N40 ANR
General Description:
VDSS
400
V
CS19N40 ANR, the silicon N-channel Enhanced ID
19
A
VDMOSFETs,.